The electrochemical method for antimony film formation is based on a co-deposition of a metal of interest (Sb), with a reversibly deposited mediator (Cd), and …
The novel approach was used to determine the nature and concentrations of ionized dopants, showing that the solution-processed Antimony sulphide thin film is highly n-type, with a donor ...
The linear concentration using the BiFSPE was in the range of 138.8–162.5 µg/L. ... The antimony film was deposited in situ on a carbon paste substrate electrode and employed in ...
Carrier concentration of S3 and S4 was higher than other samples, the possible reason was that there were too much zinc and antimony atoms that uncrystallized. Obtained carrier concentration of all the films are higher than the level of 10 19 cm −3, while most of the reported Hall carrier concentrations are below the level of 10 19 cm −3 .
The factors influencing the adsorptive stripping capability were optimised, including the complexing agent concentration, plating concentration of antimony and …
In specific, the point defect (intrinsic or extrinsic defect) determines the Fermi level (E F), free carrier concentration, and conductivity type (n or p) of …
First, with the increasing of doping concentration the deposited films lost the crystallinity [16]. Secondly, the larger of the doping concentrations induced precipitation such as the antimony oxide phase (Sb 2 O 3, Sb 2 O 4 and Sb 2 O 5 etc.) [18]; and the preferred orientation growth of SnO 2 films may be suppressed
An in-situ antimony film screen-printed carbon electrode (in-situ SbSPCE) was successfully used for the determination of Cu(II) simultaneously with Cd(II) and …
The optimization of the composition of the plating solution and parameters of the antimony film plating step (concentration of a supporting electrolyte, Sb(III) and Cd(II) as well as the potential and time antimony and cadmium simultaneous deposition) was done. The obtained results are described below.
On contrary, the carrier concentration of the undoped film is found to increase from 1.23 1019 cm 3 for the undoped films to 2.89 1021 cm 3 for 4 wt.% antimony. The variation in the sheet resistance of tin oxide thin films with antimony doping can be explained on the basis of the presence of Sb in two oxidation states namely Sb5+ and Sb3+.
Antimony film electrode (SbFE) prepared in-situ is presented for the first time in combination with adsorptive cathodic stripping regime for measuring trace levels of …
Abstract— Various approximations are considered in order to calculate the mobility and concentration of charge carriers in thin bismuth films and a bismuth–antimony solid solution oriented by the (111) plane parallel to the substrate; the resistivity, the magnetoresistance, the Hall coefficient, and the thermal electromotive …
Natural antimony concentrations in waters are not negligible, quite variable, and dependent on geology. For instance, measured dissolved antimony concentrations in European stream water (n = 807) ranged over three orders of magnitude from <2 ng L −1 (LOD) to 1.21 μg L −1 with a median value of 70 ng L −1 (Salminen et al., 2005).
The Cu-doped Sb 2 S 3 thin film discloses the enhanced crystallinity with a grain diameter greater than 1 µm and conductivity along with improved carrier concentration. At the same time, the deep …
In this study, Antimony (Sb) doped tin oxide (SnO 2) thin films (ATO) were synthesized using the RF (radio frequency) sputtering technique with varying antimony concentrations (0, 3, 5, 7 wt%) and substrate temperatures of room temperature, 150 ℃, and 300 ℃.It was discovered that these thin films were tetragonal crystal structures with …
Two main conclusions were drawn: (a) the deposition of antimony is a mass transfer-controlled process; and (b) an increase in hydrochloric acid concentration improves the deposition of antimony. The diffusion coefficient of antimony species was obtained applying the Randles-Ševčík and the Levich equations; both of them providing …
For antimony doping using CdSb at T CdTe = 840 °C with T CdSb = 350 °C, the concentration of antimony is 1 at%, corresponding to 4 × 10 20 cm −3 if incorporated. The emergent vapor flows ...
A substantial optical contrast for film thicknesses up to 15 nm has been reported when crystallizing the (as-deposited) sputtered antimony films. Here, the optical contrast for pulsed laser-deposited Sb …
The presence of 4,5-azomethine group enables its electrochemical detection Introduction A screen-printed electrode modified with antimony film was used for the determination of diazepam in ...
Highly c-axis oriented undoped and antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on a glass substrate by the sol–gel spin coating method. Six layers of deposition were repeated with 300 °C heat treatment for each layer then samples were annealed at 500 °C under an ambient atmosphere. Hall effect measurements …
An in-situ antimony film screen-printed carbon electrode (in-situ SbSPCE) was successfully used for the determination of Cu(II) simultaneously with Cd(II) and Pb(II) ions, by means of differential pulse anodic stripping voltammetry (DPASV), in a certified reference groundwater sample with a very high reproducibility and good …
List of journal articles on the topic 'Antimony (Sb) Films'. Scholarly publications with full text pdf download. Related research topic ideas. Bibliography; ... time-domain spectroscopy measurements on thin films of Bi 1 − x Sb x on polyimide and mica substrates with various antimony concentrations (x from 0 to 15 %) and film thickness …
The samples were prepared by varying the antimony concentration (0.1M, 0.15M, and 0.2M) at a pressure of 3.5 bar and a solution flow rate of 2 ml/min for 5 minutes, while the precursor solutions ...
Antimony film electrode (SbFE) prepared in-situ is presented for the first time in combination with adsorptive cathodic stripping regime for measuring trace levels of Ni(II). Stabilization of Sb(III) in mildly alkaline solution (pH 9.0) was achieved through the addition of potassium sodium tartrate in the measurement solution, and as a complexing agent …
Antimony chalcogenides are emerging photovoltaic materials, yet difficulties in fabricating high-quality films limit device performance.
Antimony-Doped Tin(II) Sulfide Thin Films ... Higher concentrations (∼5%) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films
In order to prove the effectiveness of the proposed combinatorial CBD method, a library of 3 × 3 CIGS thin films doped with varied concentration of antimony was prepared. The effects of various concentration Sb doping in the CIGS thin film on the grain growth and electrical properties were investigated systematically.
While electrodeposited antimony telluride thin films with silver contents demonstrated promising thermoelectric properties, their thermal conductivity and the silver content dependence remain...
The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 10 ... the chemical state and composition of the anodic antimony oxide films ...
Antimony film electrode (SbFE) prepared in-situ is presented for the first time in combination with adsorptive cathodic stripping regime for measuring trace levels of Ni(II). Stabilization of Sb(III) in mildly alkaline solution (pH 9.0) was achieved through the addition of potassium sodium tartrate in the measurement solution, and as a ...
Abstract Antimony doped tin oxide (ATO) or (SnO2: Sb) thin films have been prepared by spray ultrasonic on heated glass substrates at 480°C for 3min as time deposition. The dependence of structural, optical and electrical properties of SnO2: Sb films on the Sb concentration (0 - 1% wt. %), is investigated.
The phase change behaviors of titanium antimony thin films were examined as a function of Ti concentration by in situ electrical measurement. With the increment in titanium content, the crystallization temperature enhanced, while the electrical conductivity reduced. The sharp decline in carrier density is responsible for the drop of the electrical …
